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Unit symbol and abbreviation
- VB – diode breakdown voltage with the reverse current set level; - VF - diode forward constant voltage with the direct current set level; - IR – diode leakage current (reverse) with the reverse voltage set level; - IF(AV) – diode average direct current; - trr - diode reverse-recovering time;
Ultrafast diodes key specifications
- Wide operating current and voltage range: IF(AV)=1÷25A; VRRM=400÷1200V; - Low forward voltage – VF; - Low level of the reverse current –IR; - Low dissipated power; - Basic electrical parameters (VB, IR, IRRM) are being tested 100% with the normal conditions (ТА=25ºС), also sampling testing on each wafer for VF with forward current IF(AV) rating value. Reverse current is being tested by sampling on 100% wafers with elevated temperature. Normality for another parameters in spec proved by die construction. After electrical testing visual inspection is being held with the 100% of potential faulty dice rejection. JSC “VSP-Mikron” manufacture and supply UFD dice in the Ti-Ni-Ag metallization allow to make chipping on the die holder with soldering method using PbSn solders. We also offer to our customer different possible die sizes to choose good correlation between price and quality. We also provide design and developing of the UFD with customer required parameters and later mass production.
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