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JSC SITRONICS

JSC Mikron

____________________________________________________

Ultrafast
diodes 
  

   

JSC “VSP-Mikron” develop and manufacture ultrafast diodes dice (UFD).   

UFD are being used in switch-mode power supply manufacturing, converters, batteries protection circuits against polarity reversal and etc. UFD dice are being manufactured with the planar technology on the silicon epitaxial structures. 

 

 

 
Item name 
Die size, mil 
Vrrm,V
If(av),A
Vfm@If(av),V
Ir@Vrrm,uA
Trr @If=1A;
Vb=30V;
dI/dt=100A/uS, nS
КD0560UF  75*76 600 5 1,5 10 60
КD0560SF  68*68 600 5 2,5 10 30
КD0860UF  90*90 600 8 1,5 10 50
КD0860SF  81*81 600 8 2,5 10 30
КD1060UF  98*98 600 10 1,5 10 60
КD1060SF  88*88 600 10 2,5 10 30
КD1040SF  98*98 400 10 1,4   10 28
КD1560UF 115*155  600 15 1,35 10 60
КD1560SF  104*140 600 15 2,5 10 30
КD2560UF  137*215 600 25 1,5 10 60
КD2560SF 124*194 600 25 2,5 10 30
   mm  V  A V   uA  nS
КD50120UF  8,7*5 1200  50   2,19  100  40
КD75120UF  8,95*7,25 1200  75  1,77  100  40
КD100120UF   8,95*7,25  1200  100  2,56  100  40
КD75180  7,54*7,54 1800  75  2,4  100  500
КD75200  7,54*7,54 2000  75  2,5  100  500
КD50450  10,8*8,3 4500  50  3,5  100  900
 
 
 
 Preliminary

                  

                  Unit symbol and abbreviation 

   

- VB – diode breakdown voltage with the reverse current set level; 

- VF  - diode  forward constant voltage with the direct current set level; 

- IR – diode leakage current  (reverse) with the reverse voltage set level; 

- IF(AV) – diode average direct current; 

- trr   - diode reverse-recovering time;  

   

Ultrafast diodes key specifications  

  

- Wide operating current and voltage range: IF(AV)=1÷25A; VRRM=400÷1200V;

- Low forward voltage – VF

- Low level of the reverse current –IR

- Low dissipated power; 

- Basic electrical parameters  (VB, IR, IRRM) are being tested 100% with the normal conditions (ТА=25ºС), also sampling testing on each wafer for VF  with forward current IF(AV)  rating value

 

Reverse current is being tested by sampling on 100% wafers with elevated temperature. 

Normality for another parameters in spec proved by die construction. 

After electrical testing visual inspection is being held with the 100% of potential faulty dice rejection. 

JSC “VSP-Mikron”  manufacture and supply UFD dice in the 4” wafer form.   

Ti-Ni-Ag metallization allow to make chipping on the die holder with soldering method using PbSn solders. 

We also offer to our customer different possible die sizes to choose good correlation between price and quality. 

We also provide design and developing of the UFD with customer required parameters and later mass production.