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 SCHOTTKY BARRIER RECTIFIERS   Mechanical date.  
   
 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR DICE ARRAYS                      A - Die Size
   B - Top Metal Size
 KDS21XXZ  Ax-Bx=Ay-By= 140um
   Scribe Line Width - 80um
 Maximum Operating Junction Temperature — Tj=125ºC  
   Thickness:  D=300um max
     
   Top metal:  a) Al (For Wire Bonding)
     b) Al-Ni-Ag (For Soldering)
   Back metal:  Ti-Ni-Ag (For Soldering)

 

 
 
 Schottky diodes (dice on 6" wafers), super low Vf
      
 Spec.
  Part Number
Chip Size, mil 
Chip Size, mm
Vrrm, V
If(av), A
Ifsm, A
Vf@If(av), 25ºC, 
mV 
Ir@25ºC,Vr=Vr Rated,
mA
Ir@125ºC, Vr=Vr Rated,
mA
Gross dice q-ty per wafer, dice 6" 
Rev.1.Feb.2010
35
0.9 x 0.9
15
0.5
30
310
0.8
13
20740
Rev.1.Feb.2010
39
1.0 x 1.0
15
0.5
40
300
0.9
15
16750
Rev.1.Feb.2010
39
1.0 x 1.0
25
0.5
40
320
0.4
15
16750
Rev.1.Feb.2010
39
1.0 x 1.0
40
0.5
40
340
0.4
13
16750
Rev.1.Feb.2010
35
0.9 x 0.9
15
1
30
340
0.9
13
20740
Rev.1.Feb.2010
39
1.0 x 1.0
15
1
40
330
0.9
15
16750
Rev.1.Feb.2010
39
1.0 x 1.0
20
1
40
350
0.4
20
16750
Rev.1.Feb.2010
39
1.0 x 1.0
25
1
40
350
0.4
15
16750
Rev.1.Feb.2010
39
1.0 x 1.0
40
1
40
380
0.4
13
16750
Rev.1.Feb.2010
45
1.15 x 1.15
30
1
50
350
0.5
30
12365
Rev.1.Feb.2010
51
1.3 x 1.3
15
1
60
290
1.5
45
9830
Rev.1.Feb.2010
51
1.3 x 1.3
20
1
60
310
0.6
35
9830
Rev.1.Feb.2010
51
1.3 x 1.3
25
1
60
320
0.5
45
9830
 Oct. 2012
45
1.15 x 1.15 
15
2
50
400
0.6
40
12365 
 Dec. 2012
51
1.3 x 1.3 
15
2
50
360
0.25
40
4400
Rev.1.Feb.2010
51
1.3 x 1.3
30
2
60
380
1.3
60
9830
 Oct. 2012
55
1.4 x 1.4
15
2
80
340
0.3
40
8345
 Aug. 2012
55
1.4 x 1.4
20
2
80
350
0.4
40
8345
 March. 2012
55
1.4 x 1.4
25
2
80
350
0.5
40
8345
 Nov. 2011
55
1.4 x 1.4
40
2
80
380
0.5
40
8345
 Nov. 2011
55
1.4 x 1.4
40
3
80
430
0.5
40
8345
 Jun. 2012
32
0.81 x 0.81
40
3
20
630
0.3
9
11000
 Aug. 2012
60
1.52 x 1.52
40
3
90
400
0.5
45
7145
Rev.1.Feb.2010
65
1.65 x 1.65
15
2
110
310
0.8
35
5980
Rev.1.Feb.2010
60
1.52 x 1.52
20
3
90
360
0.45
45
7145
Rev.1.Feb.2010
65
1.65 x 1.65
15
3
110
330
1.5
65
5980
Rev.1.Feb.2010
65
1.65 x 1.65
25
3
110
360
0.5
45
5980
Rev.1.Feb.2010
65
1.65 x 1.65
40
3
110
380
0.5
45
5980
Rev.1.Feb.2010
65
1.65 x 1.65
20
3
110
340
0.5
55
5980
Rev.1.Feb.2010
65
1.65 x 1.65
22
3
110
345
0.45
55
5980
 Oct. 2013
65
1.65 x 1.65
40
5
110
430
0.5
50
5140
 Aug. 2012
65
1.65 x 1.65
45
5
110
440
0.5
50
5140
 Nov. 2011
80
2.03 x 2.03
80
5
135
380
1
80
3695
 Jan. 2013
98
2.5 x 2.5
40
8
160
390
1.5
80
2580
 Jun. 2011
98
2.5 x 2.5
10
10
160
430
1.5
80
2580
 Jul. 2012
90
2.28 x 2.28
40
10
160
480
2.0
80
3120
 Nov 2011
115
2.92 x 2.92
40
10
200
380
2.5
100
1870
 Jul. 2011
106
2.7 x 2.7
40
10
180
420
1.5
100
2190
 Jul. 2012
106
2.7 x 2.7
60
10
160
520
2.5
80
2190
Rev.1.Feb.2010
106 x 158
2.7 x 4.0
15
20
300
360
10
450
1480
Rev.1.Feb.2010
106 x 158
2.7 x 4.0
25
20
300
380
8
350
1480
 March 2010
106 x 158
2.7 x 4.0
15
30
300
365
10
450
1180
 Aug. 2011
18
0.46 x 0.46
20
0.5
5
450
0,1
9
67980
 July 2013
32
0.81 x 0.81
40
1
20
450
0,2
10
24930
 Apr. 2013
32
0.81 x 0.81
45
1
20
450
0.2
10
24930
 Apr. 2013
39
1.0 x 1.0
45
1
40
380
0.4
15
16750
 Jun. 2012
45
1.15 x 1.15
40
2
50
430
0.5
40
12365
 Apr. 2013
45
1.15 x 1.15
40
2
50
450
0.5
20
12365
 May 2013
51
1.3 x 1.3
40
3
60
430
0.5
40
9830
 Sep. 2013
65
1.65 x 1.65
40
3
110
380
0.45
45
5980
 Aug. 2013
73
1.85 x 1.85
40
5
135
390
0.8
80
4750
 Sep. 2011
39
1.0 x 1.0
30
1
45
370
0.18
25
16750
           
 
 
The original technology provides increased stability of diodes to avalanche energy and high values of a repeating peak reverse current-IRRM influence.
 
All diode types meet requirements of JEDEC standard for ESD HBM influence stability (±15kV air discharge; ±8kV contact discharge).